TY - GEN
T1 - Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress
AU - Gurfinkel, M.
AU - Suehle, J.
AU - Bernstein, J. B.
AU - Shapira, Y.
AU - Lelis, A. J.
AU - Habersat, D.
AU - Goldsman, N.
PY - 2006
Y1 - 2006
N2 - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the VTH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO2 interface is proposed.
AB - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the VTH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO2 interface is proposed.
UR - https://www.scopus.com/pages/publications/41649108445
U2 - 10.1109/IRWS.2006.305209
DO - 10.1109/IRWS.2006.305209
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AN - SCOPUS:41649108445
SN - 1424402964
SN - 9781424402960
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 49
EP - 53
BT - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Y2 - 16 October 2006 through 19 October 2006
ER -