תקציר
Laser-induced vertical links between two metallization levels have provided the restructurable very large scale integrated approach to wafer-scale integration. In this process, interlevel insulation is reacted with molten metallic puddles formed by the application of suitable laser pulses. As a result, the insulating film is locally damaged, and the effected region becomes conductive, thus altering the signal path as desired. We discuss briefly the essential features of laser-beam application to a conductive film in contact with an insulating substrate. Of particular interest is the molten zone that forms at appropriate laser-beam and substrate conditions. We show how thermochemical effects result in low ohmic resistance connections in silicon nitride-based link structure. The understanding gained in this case led to a new possible link structure. Silicon dioxide-based links have been examined. In addition to electrical measurements, Auger electron spectroscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy have been used to examine various properties of the vertical links.
שפה מקורית | אנגלית |
---|---|
עמודים (מ-עד) | 3013-3018 |
מספר עמודים | 6 |
כתב עת | Journal of the Electrochemical Society |
כרך | 138 |
מספר גיליון | 10 |
מזהי עצם דיגיטלי (DOIs) | |
סטטוס פרסום | פורסם - אוק׳ 1991 |
פורסם באופן חיצוני | כן |