Temperature independent quantum well fet with delta channel doping

P. G. Young; R. A. Mena; S. A. Alterovitz; S. E. Schacham; E. J. Haugland

doi:10.1049/el:19920858

Temperature independent quantum well fet with delta channel doping

P. G. Young, R. A. Mena, S. A. Alterovitz, S. E. Schacham, E. J. Haugland

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

5 ציטוטים ‏(Scopus)

תקציר

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant G_max and F_max were measured over the temperature range 300–70K.

שפה מקורית	אנגלית
עמודים (מ-עד)	1352-1353
מספר עמודים	2
כתב עת	Electronics Letters
כרך	28
מספר גיליון	14
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1049/el:19920858
סטטוס פרסום	פורסם - 2 יולי 1992
פורסם באופן חיצוני	כן

גישה למסמך

10.1049/el:19920858

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Temperature independent quantum well fet with delta channel doping",

abstract = "A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.",

keywords = "Field-effect transistors, Semiconductor devices and materials, Transistors",

author = "Young, {P. G.} and Mena, {R. A.} and Alterovitz, {S. A.} and Schacham, {S. E.} and Haugland, {E. J.}",

year = "1992",

month = jul,

day = "2",

doi = "10.1049/el:19920858",

language = "אנגלית",

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T1 - Temperature independent quantum well fet with delta channel doping

AU - Young, P. G.

AU - Mena, R. A.

AU - Alterovitz, S. A.

AU - Schacham, S. E.

AU - Haugland, E. J.

PY - 1992/7/2

Y1 - 1992/7/2

N2 - A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

AB - A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

KW - Field-effect transistors

KW - Semiconductor devices and materials

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=0027109126&partnerID=8YFLogxK

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DO - 10.1049/el:19920858

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AN - SCOPUS:0027109126

SN - 0013-5194

VL - 28

SP - 1352

EP - 1353

JO - Electronics Letters

JF - Electronics Letters

IS - 14

ER -

Temperature independent quantum well fet with delta channel doping

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