Temperature dependence of middle infrared absorption lines in silver halide crystals doped with Pr3+, Dy3+, and Nd3+ ions

I. Shafir; L. Nagli; A. Katzir

doi:10.1063/1.3483954

Temperature dependence of middle infrared absorption lines in silver halide crystals doped with Pr³⁺, Dy³⁺, and Nd³⁺ ions

I. Shafir, L. Nagli, A. Katzir

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

5 ציטוטים ‏(Scopus)

תקציר

The electron-phonon coupling was investigated for mid-infrared transitions in silver halide crystals doped with Pr, Dy, or Nd. The temperature dependence of the absorption spectral line widths and the line shifts were measured in mid-infrared absorption lines in these crystals. It was shown that in each case the temperature dependence is consistent with the two-phonon Raman process model having a single characteristic Debye temperature. This Debye temperature was found to be in the range of 142-155.5 K. It was also found that below 50 K the line widths are caused by inhomogeneous crystal strains.

שפה מקורית	אנגלית
מספר המאמר	083106
כתב עת	Journal of Applied Physics
כרך	108
מספר גיליון	8
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1063/1.3483954
סטטוס פרסום	פורסם - 15 אוק׳ 2010
פורסם באופן חיצוני	כן

גישה למסמך

10.1063/1.3483954

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Temperature dependence of middle infrared absorption lines in silver halide crystals doped with Pr3+, Dy3+, and Nd3+ ions",

abstract = "The electron-phonon coupling was investigated for mid-infrared transitions in silver halide crystals doped with Pr, Dy, or Nd. The temperature dependence of the absorption spectral line widths and the line shifts were measured in mid-infrared absorption lines in these crystals. It was shown that in each case the temperature dependence is consistent with the two-phonon Raman process model having a single characteristic Debye temperature. This Debye temperature was found to be in the range of 142-155.5 K. It was also found that below 50 K the line widths are caused by inhomogeneous crystal strains.",

author = "I. Shafir and L. Nagli and A. Katzir",

note = "Funding Information: This research was supported by the Israel Science Foundation under Grant No. 0603215183, and by the Institute for Future Defense Technologies Research named for the Medvedi, Shwartzman, and Gensler families. The authors thank Mrs. I. Vaserman for growing the crystals, and Mr. E. Shaked and Mr. R. Laufer for technical assistance.",

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AU - Shafir, I.

AU - Nagli, L.

AU - Katzir, A.

N1 - Funding Information: This research was supported by the Israel Science Foundation under Grant No. 0603215183, and by the Institute for Future Defense Technologies Research named for the Medvedi, Shwartzman, and Gensler families. The authors thank Mrs. I. Vaserman for growing the crystals, and Mr. E. Shaked and Mr. R. Laufer for technical assistance.

PY - 2010/10/15

Y1 - 2010/10/15

N2 - The electron-phonon coupling was investigated for mid-infrared transitions in silver halide crystals doped with Pr, Dy, or Nd. The temperature dependence of the absorption spectral line widths and the line shifts were measured in mid-infrared absorption lines in these crystals. It was shown that in each case the temperature dependence is consistent with the two-phonon Raman process model having a single characteristic Debye temperature. This Debye temperature was found to be in the range of 142-155.5 K. It was also found that below 50 K the line widths are caused by inhomogeneous crystal strains.

AB - The electron-phonon coupling was investigated for mid-infrared transitions in silver halide crystals doped with Pr, Dy, or Nd. The temperature dependence of the absorption spectral line widths and the line shifts were measured in mid-infrared absorption lines in these crystals. It was shown that in each case the temperature dependence is consistent with the two-phonon Raman process model having a single characteristic Debye temperature. This Debye temperature was found to be in the range of 142-155.5 K. It was also found that below 50 K the line widths are caused by inhomogeneous crystal strains.

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