TY - GEN
T1 - Study of transistor and product NBTI lifetime distributions
AU - Qin, Jin
AU - Yan, Baoguang
AU - Shoshany, Yossi
AU - Roy, Druker
AU - Rahamim, Hezi
AU - Marom, Haim
AU - Bernstein, Joseph B.
PY - 2008
Y1 - 2008
N2 - NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution is found to have the best fit. Product level NBTI lifetime distribution is studied through rare event simulation. Result shows that Weibull distribution has a better fit than lognormal distribution at product level. Acceleration test result of 90nm SRAM cache NBTI degradation is compared with the simulation results and a good agreement is observed.
AB - NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution is found to have the best fit. Product level NBTI lifetime distribution is studied through rare event simulation. Result shows that Weibull distribution has a better fit than lognormal distribution at product level. Acceleration test result of 90nm SRAM cache NBTI degradation is compared with the simulation results and a good agreement is observed.
UR - https://www.scopus.com/pages/publications/64549154401
U2 - 10.1109/IRWS.2008.4796134
DO - 10.1109/IRWS.2008.4796134
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AN - SCOPUS:64549154401
SN - 9781424421954
T3 - IEEE International Integrated Reliability Workshop Final Report
SP - 64
EP - 67
BT - 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2008 IEEE International Integrated Reliability Workshop, IRW 2008
Y2 - 12 October 2008 through 16 October 2008
ER -