Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

S. Maimon; G. M. Cohen; E. Finkman; G. Bahir; D. Ritter; S. E. Schacham

doi:10.1063/1.122006

Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

S. Maimon, G. M. Cohen, E. Finkman, G. Bahir, D. Ritter, S. E. Schacham

הנדסת חשמל ואלקטרוניקה

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

15 ציטוטים ‏(Scopus)

תקציר

A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λ_P=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of D_λ^*(BLIP)=3.2×10¹⁰cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

שפה מקורית	אנגלית
עמודים (מ-עד)	800-802
מספר עמודים	3
כתב עת	Applied Physics Letters
כרך	73
מספר גיליון	6
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1063/1.122006
סטטוס פרסום	פורסם - 1998

גישה למסמך

10.1063/1.122006

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

@article{adae24d091b04427adea234fa55d6233,

title = "Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection",

abstract = "A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.",

author = "S. Maimon and Cohen, {G. M.} and E. Finkman and G. Bahir and D. Ritter and Schacham, {S. E.}",

year = "1998",

doi = "10.1063/1.122006",

language = "אנגלית",

volume = "73",

pages = "800--802",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

AU - Maimon, S.

AU - Cohen, G. M.

AU - Finkman, E.

AU - Bahir, G.

AU - Ritter, D.

AU - Schacham, S. E.

PY - 1998

Y1 - 1998

N2 - A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

AB - A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

UR - http://www.scopus.com/inward/record.url?scp=0000407472&partnerID=8YFLogxK

U2 - 10.1063/1.122006

DO - 10.1063/1.122006

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0000407472

SN - 0003-6951

VL - 73

SP - 800

EP - 802

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

תקציר

גישה למסמך

קבצים וקישורים אחרים

טביעת אצבע

פורמט ציטוט ביבליוגרפי