Spatial distributions of trapping centers in HfO 2/SiO 2 gate stacks

Dawei Heh; Chadwin D. Young; George A. Brown; P. Y. Hung; Alain Diebold; Gennadi Bersuker; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.2195896

Spatial distributions of trapping centers in HfO ₂/SiO ₂ gate stacks

Dawei Heh
, Chadwin D. Young
, George A. Brown
, P. Y. Hung
, Alain Diebold
, Gennadi Bersuker
, Eric M. Vogel
, Joseph B. Bernstein

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

71 ציטוטים ‏(Scopus)

תקציר

A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2 HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high- k film.

שפה מקורית	אנגלית
מספר המאמר	152907
כתב עת	Applied Physics Letters
כרך	88
מספר גיליון	15
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1063/1.2195896
סטטוס פרסום	פורסם - 10 אפר׳ 2006
פורסם באופן חיצוני	כן

גישה למסמך

10.1063/1.2195896

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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abstract = "A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2 HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high- k film.",

author = "Dawei Heh and Young, \{Chadwin D.\} and Brown, \{George A.\} and Hung, \{P. Y.\} and Alain Diebold and Gennadi Bersuker and Vogel, \{Eric M.\} and Bernstein, \{Joseph B.\}",

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AU - Diebold, Alain

AU - Bersuker, Gennadi

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

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