Self-heating Effects Measured in Fully Packaged FinFET Devices

E. Bender, J. B. Bernstein

פרסום מחקרי: פרק בספר / בדוח / בכנספרסום בספר כנסביקורת עמיתים

2 ציטוטים ‏(Scopus)

תקציר

A unique, resource efficient method for finding the impact of Self-heating Effects (SHE) in packaged FinFET devices is presented in this work. Device level concerns seen in reliability degradation and system level issues with power dissipation are inspected using separate measuring techniques. We show that a frequency effect observed in reliability is attributed to self-heating of the Fins during device transition. The increase in temperature due to current induced self-heating was measured up to 1 GHz and extrapolated to 3 GHz. Temperature rise of the total chip caused by dynamic power dissipation is evaluated. The self-heating contribution is assessed by finding the relative thermal offset from increased frequency compared to that of added logic. A significant correlation is revealed from evaluating the device and system level studies. The method can be easily performed on smaller dimension nodes where the effects of SHE are more acute.

שפה מקוריתאנגלית
כותר פרסום המארח2021 IEEE 32nd International Conference on Microelectronics, MIEL 2021 - Proceedings
מוציא לאורInstitute of Electrical and Electronics Engineers Inc.
עמודים65-68
מספר עמודים4
מסת"ב (אלקטרוני)9781665445283
מזהי עצם דיגיטלי (DOIs)
סטטוס פרסוםפורסם - 12 ספט׳ 2021
אירוע32nd IEEE International Conference on Microelectronics, MIEL 2021 - Nis, סרביה
משך הזמן: 12 ספט׳ 202114 ספט׳ 2021

סדרות פרסומים

שםProceedings of the International Conference on Microelectronics, ICM
כרך2021-September

כנס

כנס32nd IEEE International Conference on Microelectronics, MIEL 2021
מדינה/אזורסרביה
עירNis
תקופה12/09/2114/09/21

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