TY - JOUR
T1 - Quantitatively analyzing the performance of integrated circuits and their reliability
AU - Wyrwas, Edward J.
AU - Bernstein, Joseph B.
N1 - Funding Information:
The initial work for 0.13 micron and 90 nm technologies was funded by Aero Engine Controls, Boeing, General Electric (GE), the National Aeronautics and Space Administration (NASA), the Department of Defense (DoD), and the Federal Aviation Administration (FAA) in cooperation with the Aerospace Vehicle Systems Institute (AVSI). DfR Solutions is now working to extend the capability of the tool into smaller technology nodes, including 65 nm, 45 nm, and 32 nm.
PY - 2011/2
Y1 - 2011/2
N2 - Engineers make significant efforts to quantitatively analyzing the performance of integrated circuits (IC) and their reliability. The ability to analyze and understand the impact that specific operating parameters have on device reliability is essential to mitigate the risk of system degradation which will affect measurements being taken by the system and cause early failure of that system. There are four semiconductor failure mechanisms in silicon-based ICs that are analyzed, such as electromigration (EM), time dependent dielectric breakdown (TDDB), hot carrier injection (HCI), and negative bias temperature instability (NBTI). Mitigation of these inherent failure mechanisms is possible when reliability can be quantitatively calculated. Algorithms folded into a software application have been designed to calculate a failure rate, give confidence intervals, and produce a lifetime curve using steady state and wearout failure rates for the IC being analyzed.
AB - Engineers make significant efforts to quantitatively analyzing the performance of integrated circuits (IC) and their reliability. The ability to analyze and understand the impact that specific operating parameters have on device reliability is essential to mitigate the risk of system degradation which will affect measurements being taken by the system and cause early failure of that system. There are four semiconductor failure mechanisms in silicon-based ICs that are analyzed, such as electromigration (EM), time dependent dielectric breakdown (TDDB), hot carrier injection (HCI), and negative bias temperature instability (NBTI). Mitigation of these inherent failure mechanisms is possible when reliability can be quantitatively calculated. Algorithms folded into a software application have been designed to calculate a failure rate, give confidence intervals, and produce a lifetime curve using steady state and wearout failure rates for the IC being analyzed.
KW - Integrated circuits
KW - Performance evaluation
KW - Quantization
KW - Reliability
UR - https://www.scopus.com/pages/publications/79551624883
U2 - 10.1109/MIM.2011.5704807
DO - 10.1109/MIM.2011.5704807
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AN - SCOPUS:79551624883
SN - 1094-6969
VL - 14
SP - 24
EP - 31
JO - IEEE Instrumentation and Measurement Magazine
JF - IEEE Instrumentation and Measurement Magazine
IS - 1
M1 - 5704807
ER -