TY - GEN
T1 - Novel sputtering method for Pd-Al2O3 W transparent conductive coatings
AU - Axelevitch, A.
AU - Golan, G.
AU - Rabinovitch, E.
AU - Margolin, R.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2000
Y1 - 2000
N2 - Transparent conductive layers like indium tin oxide (ITO) or zinc oxide, that are commonly used as signal electrodes of vidicon television tubes, have an absorption edge in the visible range (350-400 nm) and therefore are not transparent in the ultra-violet (W). We have developed the Pd-Al2O3 thin film structure appropriated as a signal electrode for the vidicon operating in near W area. The films were deposited using a novel sputtering method. The 20 Ä thick Pd layer served as the conducting plate while the 30-50 A° thick Al2O3 coating functioned as the transparent protective film. The obtained signal plates had a sheet resistance of 2.5 K and a transparency coefficient of 71% at a wavelength of 250 nm, which is suitable for near ultraIviolet applications. The main advantage of vidicons equipped with such signal plates is that their dark current was less than 0.05 nA.
AB - Transparent conductive layers like indium tin oxide (ITO) or zinc oxide, that are commonly used as signal electrodes of vidicon television tubes, have an absorption edge in the visible range (350-400 nm) and therefore are not transparent in the ultra-violet (W). We have developed the Pd-Al2O3 thin film structure appropriated as a signal electrode for the vidicon operating in near W area. The films were deposited using a novel sputtering method. The 20 Ä thick Pd layer served as the conducting plate while the 30-50 A° thick Al2O3 coating functioned as the transparent protective film. The obtained signal plates had a sheet resistance of 2.5 K and a transparency coefficient of 71% at a wavelength of 250 nm, which is suitable for near ultraIviolet applications. The main advantage of vidicons equipped with such signal plates is that their dark current was less than 0.05 nA.
UR - http://www.scopus.com/inward/record.url?scp=84953439858&partnerID=8YFLogxK
U2 - 10.1109/EEEI.2000.924452
DO - 10.1109/EEEI.2000.924452
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AN - SCOPUS:84953439858
T3 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
SP - 409
EP - 412
BT - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st IEEE Convention of the Electrical and Electronic Engineers in Israel, IEEEI 2000
Y2 - 11 April 2000 through 12 April 2000
ER -