Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach; E. Gross; C. Y. Huang; Y. D. Lin; A. Vardi; S. E. Schacham; S. Nakamura; G. Bahir

doi:10.1063/1.4813395

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

A. Pesach
, E. Gross
, C. Y. Huang
, Y. D. Lin
, A. Vardi
, S. E. Schacham
, S. Nakamura
, G. Bahir

הנדסת חשמל ואלקטרוניקה

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

42 ציטוטים ‏(Scopus)

תקציר

We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔE_c:ΔE _v) of 57:43 for In_0.1Ga_0.9N/GaN and 55:45, for In_0.095GA_0.905N/Al_0.07Ga_0.93N non-polar m-plane multi-quantum well structures.

שפה מקורית	אנגלית
מספר המאמר	022110
כתב עת	Applied Physics Letters
כרך	103
מספר גיליון	2
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1063/1.4813395
סטטוס פרסום	פורסם - 8 יולי 2013

גישה למסמך

10.1063/1.4813395

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

@article{53f600499c904d358000eb45fa87f8af,

title = "Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors",

abstract = "We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schr{\"o}dinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.",

author = "A. Pesach and E. Gross and Huang, \{C. Y.\} and Lin, \{Y. D.\} and A. Vardi and Schacham, \{S. E.\} and S. Nakamura and G. Bahir",

note = "Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.” ",

year = "2013",

month = jul,

day = "8",

doi = "10.1063/1.4813395",

language = "אנגלית",

volume = "103",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

AU - Pesach, A.

AU - Gross, E.

AU - Huang, C. Y.

AU - Lin, Y. D.

AU - Vardi, A.

AU - Schacham, S. E.

AU - Nakamura, S.

AU - Bahir, G.

N1 - Funding Information: The authors acknowledge partial financial support by the EC FET OPEN “Unitride” Grant No. 233950. The authors would like to thank Dr. S. Sakr, Dr. F. J. Julien, and Dr. E. Monroy for their help throughout this work. The MQW structures were grown at “University of California, Santa Barbara.”

PY - 2013/7/8

Y1 - 2013/7/8

N2 - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

AB - We demonstrate intersuband InGaN/(Al)GaN quantum well infrared photodetectors grown on a free standing non-polar m-plane GaN substrate. The devices are grown by metal organic chemical vapor deposition and exhibit TM-polarized photocurrent at peak wavelengths of 7.5 and 9.3 μm at temperature of 14 K. Based on the experimental data of intersubband and interband transition energies and 8-band k·p Schrödinger-Poisson solver calculations, we were able to estimate the conduction band offset to valence band offset discontinuity ratio (ΔEc:ΔE v) of 57:43 for In0.1Ga0.9N/GaN and 55:45, for In0.095GA0.905N/Al0.07Ga0.93N non-polar m-plane multi-quantum well structures.

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AN - SCOPUS:84880498345

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors

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