Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin; Joseph B. Bernstein

doi:10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

Qin Jin
, Joseph B. Bernstein

פרסום מחקרי: פרק בספר / בדוח / בכנס › פרסום בספר כנס › ביקורת עמיתים

17 ציטוטים ‏(Scopus)

תקציר

In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

שפה מקורית	אנגלית
כותר פרסום המארח	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
מוציא לאור	Institute of Electrical and Electronics Engineers Inc.
עמודים	93-97
מספר עמודים	5
מסת"ב (מודפס)	1424402964, 9781424402960
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1109/IRWS.2006.305219
סטטוס פרסום	פורסם - 2006
פורסם באופן חיצוני	כן
אירוע	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, ארצות הברית משך הזמן: 16 אוק׳ 2006 → 19 אוק׳ 2006

סדרות פרסומים

שם	IEEE International Integrated Reliability Workshop Final Report
ISSN (מודפס)	1930-8841
ISSN (אלקטרוני)	2374-8036

כנס

כנס	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
מדינה/אזור	ארצות הברית
עיר	South Lake Tahoe, CA
תקופה	16/10/06 → 19/10/06

גישה למסמך

10.1109/IRWS.2006.305219

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

Jin, Q., & Bernstein, J. B. (2006). Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. ב- 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (עמודים 93-97). המאמר 4098696 (IEEE International Integrated Reliability Workshop Final Report). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRWS.2006.305219

Jin, Qin ; Bernstein, Joseph B. / Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. עמודים 93-97 (IEEE International Integrated Reliability Workshop Final Report).

@inproceedings{b0148d361fe4427cbdf2f137b2edd2e7,

title = "Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms",

abstract = "In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.",

author = "Qin Jin and Bernstein, \{Joseph B.\}",

year = "2006",

doi = "10.1109/IRWS.2006.305219",

language = "אנגלית",

isbn = "1424402964",

series = "IEEE International Integrated Reliability Workshop Final Report",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "93--97",

booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

address = "ארצות הברית",

note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

}

Jin, Q & Bernstein, JB 2006, Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. ב- 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098696, IEEE International Integrated Reliability Workshop Final Report, Institute of Electrical and Electronics Engineers Inc., עמודים 93-97, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, ארצות הברית, 16/10/06. https://doi.org/10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. / Jin, Qin; Bernstein, Joseph B.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc., 2006. עמוד 93-97 4098696 (IEEE International Integrated Reliability Workshop Final Report).

פרסום מחקרי: פרק בספר / בדוח / בכנס › פרסום בספר כנס › ביקורת עמיתים

TY - GEN

T1 - Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

AU - Jin, Qin

AU - Bernstein, Joseph B.

PY - 2006

Y1 - 2006

N2 - In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

AB - In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius relationship is proposed to model the temperature dependence of device lifetime at given voltage. A modified exponential model is also proposed to model the voltage dependence of device lifetime at given temperature.

UR - https://www.scopus.com/pages/publications/41649116868

U2 - 10.1109/IRWS.2006.305219

DO - 10.1109/IRWS.2006.305219

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:41649116868

SN - 1424402964

SN - 9781424402960

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 93

EP - 97

BT - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW

Y2 - 16 October 2006 through 19 October 2006

ER -

Jin Q, Bernstein JB. Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms. ב- 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. Institute of Electrical and Electronics Engineers Inc. 2006. עמוד 93-97. 4098696. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305219

Non-arrhenius temperature acceleration and stress-dependent voltage acceleration for semiconductor device involving multiple failure mechanisms

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