@inproceedings{7690271dfa144cca802b1a632068c2f4,
title = "Monolithic focal-plane cell in InSb",
abstract = "A monolithic infrared focal plane array where photo-diodes and field effect transistors are integrated is presented. The photodiode is connected directly to the integrating capacitor while the transistor controls the integrated signal-charge transfer to the video line. The operating modes of such array are discussed and especially the pseudo-staring mode. Such arrays were produced and their system performance were investigated. The detectors average specific detectivity D*λ(f/no = 1, λ = 3.83 μm) was equal to 1.3 × 1011 [cm-Hz 1/2 /W] and was used calculate the Noise Equivalent Temperature Difference (NETD) as a function of the number of detectors and vectors. The NETD was estimated to be of 0.039 K for an optimal 5 vectors array.",
author = "Avishai Kepten and Shacham-Diamand, {Yosef Y.} and Schacham, {S. E.}",
year = "1992",
doi = "10.1117/12.138632",
language = "אנגלית",
isbn = "0819409081",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
pages = "277--286",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "Infrared Detectors: State of the Art ; Conference date: 19-07-1992 Through 19-07-1992",
}