Investigation of metal-polycrystalline silicon carbide bonding while metallization

Polycrystalline silicon carbide heaters o rheated substrates are widely used within the semiconductor industry. The problem of making reliable contacts between such SiC and various metals is most relevant. The main goal of our investigation was an experimental study of molten metals (Fe, Cu, Cr) behavior on top of surfaces of polycrystalline silicon carbide SiC. The mechanism of melt-polycrystalline SiC interaction was found and reported. Non-wetting metal in a liquid phase penetrates into the micro and macro volumes in the polycrystalline SiC surface and holds there due to the residual stresses originated by the difference in the linear expansion coefficients. Metal layers obtained on the poly-crystalline SiC surfaces by the described method were durable and stable.