Intraband luminescence of CsI crystal

R. Deich; M. Karklina; L. Nagli

doi:10.1016/0038-1098(89)90212-3

Intraband luminescence of CsI crystal

R. Deich, M. Karklina, L. Nagli

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

24 ציטוטים ‏(Scopus)

תקציר

The superfast luminescence (SFL) spectra with the decay time of ≤10 ps under a picosecond electron pulse irradiation and a nanosecond KrF laser excitation has been studied for pure and Na⁺ -ion doped crystals of CsI. The SFL spectral range (1.0-2.5 eV) and its small decay time suggests that this emission is due to hot hole radiative transitions between the states of CsI valence band. The SFL's short wavelength threshold at 2.5 eV connected with transitions between I^-2P_{3 2} and I^-2P_{1 2} subbands. The value of the SFL quantum yield is ∼10^-5.

שפה מקורית	אנגלית
עמודים (מ-עד)	859-862
מספר עמודים	4
כתב עת	Solid State Communications
כרך	71
מספר גיליון	10
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1016/0038-1098(89)90212-3
סטטוס פרסום	פורסם - ספט׳ 1989
פורסם באופן חיצוני	כן

גישה למסמך

10.1016/0038-1098(89)90212-3

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Intraband luminescence of CsI crystal",

abstract = "The superfast luminescence (SFL) spectra with the decay time of ≤10 ps under a picosecond electron pulse irradiation and a nanosecond KrF laser excitation has been studied for pure and Na+ -ion doped crystals of CsI. The SFL spectral range (1.0-2.5 eV) and its small decay time suggests that this emission is due to hot hole radiative transitions between the states of CsI valence band. The SFL's short wavelength threshold at 2.5 eV connected with transitions between I-2P 3 2 and I-2P 1 2 subbands. The value of the SFL quantum yield is ∼10-5.",

author = "R. Deich and M. Karklina and L. Nagli",

year = "1989",

month = sep,

doi = "10.1016/0038-1098(89)90212-3",

language = "אנגלית",

volume = "71",

pages = "859--862",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "10",

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TY - JOUR

T1 - Intraband luminescence of CsI crystal

AU - Deich, R.

AU - Karklina, M.

AU - Nagli, L.

PY - 1989/9

Y1 - 1989/9

N2 - The superfast luminescence (SFL) spectra with the decay time of ≤10 ps under a picosecond electron pulse irradiation and a nanosecond KrF laser excitation has been studied for pure and Na+ -ion doped crystals of CsI. The SFL spectral range (1.0-2.5 eV) and its small decay time suggests that this emission is due to hot hole radiative transitions between the states of CsI valence band. The SFL's short wavelength threshold at 2.5 eV connected with transitions between I-2P 3 2 and I-2P 1 2 subbands. The value of the SFL quantum yield is ∼10-5.

AB - The superfast luminescence (SFL) spectra with the decay time of ≤10 ps under a picosecond electron pulse irradiation and a nanosecond KrF laser excitation has been studied for pure and Na+ -ion doped crystals of CsI. The SFL spectral range (1.0-2.5 eV) and its small decay time suggests that this emission is due to hot hole radiative transitions between the states of CsI valence band. The SFL's short wavelength threshold at 2.5 eV connected with transitions between I-2P 3 2 and I-2P 1 2 subbands. The value of the SFL quantum yield is ∼10-5.

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U2 - 10.1016/0038-1098(89)90212-3

DO - 10.1016/0038-1098(89)90212-3

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AN - SCOPUS:0024733067

SN - 0038-1098

VL - 71

SP - 859

EP - 862

JO - Solid State Communications

JF - Solid State Communications

IS - 10

ER -

Intraband luminescence of CsI crystal

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