Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.1572466

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

Dawei Heh
, Eric M. Vogel
, Joseph B. Bernstein

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

15 ציטוטים ‏(Scopus)

תקציר

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

שפה מקורית	אנגלית
עמודים (מ-עד)	3242-3244
מספר עמודים	3
כתב עת	Applied Physics Letters
כרך	82
מספר גיליון	19
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1063/1.1572466
סטטוס פרסום	פורסם - 12 מאי 2003
פורסם באופן חיצוני	כן

גישה למסמך

10.1063/1.1572466

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Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown",

abstract = "Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).",

author = "Dawei Heh and Vogel, \{Eric M.\} and Bernstein, \{Joseph B.\}",

year = "2003",

month = may,

day = "12",

doi = "10.1063/1.1572466",

language = "אנגלית",

volume = "82",

pages = "3242--3244",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

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T1 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

AU - Heh, Dawei

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

PY - 2003/5/12

Y1 - 2003/5/12

N2 - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

AB - Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown was discussed. It was found that different breakdown mechanisms may dominate or different defects were generated under different stress conditions. The results showed that defects generated by hot holes had little or no influence on breakdown during constant voltage stress (CVS).

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DO - 10.1063/1.1572466

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AN - SCOPUS:0037981328

SN - 0003-6951

VL - 82

SP - 3242

EP - 3244

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Impact of substrate hot hole injection on ultrathin silicon dioxide breakdown

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