תקציר
Granular aluminum is a promising material for high kinetic inductance devices such as qubit circuits. It has the advantage over atomically disordered materials such as NbNx, to maintain a high kinetic inductance concomitantly with a high quality factor. We show that high quality nano-scale granular aluminum films having a sharp superconducting transition with normal state resistivity values on the order of 1 × 10 5 μ ω cm and kinetic inductance values on the order of 10 n H / □ can be obtained, surpassing the state-of-the-art values. We argue that this is a result of the different nature of the metal-to-insulator transition, being electronic correlations driven (Mott type) in the former and disorder driven (Anderson type) in the latter.
שפה מקורית | אנגלית |
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מספר המאמר | 062601 |
כתב עת | Applied Physics Letters |
כרך | 117 |
מספר גיליון | 6 |
מזהי עצם דיגיטלי (DOIs) | |
סטטוס פרסום | פורסם - 10 אוג׳ 2020 |