@inproceedings{0d2f47c2a2ff441087a1073f02db6113,
title = "Enhanced gate induced drain leakage current in HfO2 MOSFETs due to remote interface trap-assisted tunneling",
abstract = "High-κ dielectric gate stack MOSFETs have been characterized by separating the transversal and lateral electric field contributions to the substrate current. The results show that at low gate biases the substrate current is dominated by a trap-assisted tunneling component denoted by gate induced drain leakage (GIDL) current, which is not observed in conventional SiO2 devices. Ultra-fast substrate current measurements rule out transient charging of the gate oxide as the cause of this component. A physical model of the observed substrate current dependence is proposed.",
author = "M. Gurfinkel and Suehle, \{J. S.\} and Bernstein, \{J. B.\} and Yoram Shapira",
year = "2006",
doi = "10.1109/IEDM.2006.346896",
language = "אנגלית",
isbn = "1424404398",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2006 International Electron Devices Meeting Technical Digest, IEDM",
note = "2006 International Electron Devices Meeting, IEDM ; Conference date: 10-12-2006 Through 13-12-2006",
}