Electronic circuit reliability modeling

Joseph B. Bernstein; Moshe Gurfinkel; Xiaojun Li; Jörg Walters; Yoram Shapira; Michael Talmor

doi:10.1016/j.microrel.2005.12.004

Electronic circuit reliability modeling

Joseph B. Bernstein
, Moshe Gurfinkel
, Xiaojun Li
, Jörg Walters
, Yoram Shapira
, Michael Talmor

פרסום מחקרי: פרסום בכתב עת › מאמר › ביקורת עמיתים

154 ציטוטים ‏(Scopus)

תקציר

The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed. The simulation tools and failure equivalent circuits are described. The review includes historical background as well as a new approach for accurately predicting circuit reliability and failure rate from the system point of view.

שפה מקורית	אנגלית
עמודים (מ-עד)	1957-1979
מספר עמודים	23
כתב עת	Microelectronics Reliability
כרך	46
מספר גיליון	12
מזהי עצם דיגיטלי (DOIs)	https://doi.org/10.1016/j.microrel.2005.12.004
סטטוס פרסום	פורסם - דצמ׳ 2006
פורסם באופן חיצוני	כן

גישה למסמך

10.1016/j.microrel.2005.12.004

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Electronic circuit reliability modeling",

abstract = "The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed. The simulation tools and failure equivalent circuits are described. The review includes historical background as well as a new approach for accurately predicting circuit reliability and failure rate from the system point of view.",

author = "Bernstein, \{Joseph B.\} and Moshe Gurfinkel and Xiaojun Li and J{\"o}rg Walters and Yoram Shapira and Michael Talmor",

year = "2006",

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language = "אנגלית",

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journal = "Microelectronics Reliability",

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TY - JOUR

T1 - Electronic circuit reliability modeling

AU - Bernstein, Joseph B.

AU - Gurfinkel, Moshe

AU - Li, Xiaojun

AU - Walters, Jörg

AU - Shapira, Yoram

AU - Talmor, Michael

PY - 2006/12

Y1 - 2006/12

N2 - The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed. The simulation tools and failure equivalent circuits are described. The review includes historical background as well as a new approach for accurately predicting circuit reliability and failure rate from the system point of view.

AB - The intrinsic failure mechanisms and reliability models of state-of-the-art MOSFETs are reviewed. The simulation tools and failure equivalent circuits are described. The review includes historical background as well as a new approach for accurately predicting circuit reliability and failure rate from the system point of view.

UR - https://www.scopus.com/pages/publications/33748937377

U2 - 10.1016/j.microrel.2005.12.004

DO - 10.1016/j.microrel.2005.12.004

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AN - SCOPUS:33748937377

SN - 0026-2714

VL - 46

SP - 1957

EP - 1979

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 12

ER -

Electronic circuit reliability modeling

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