Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

Yuan Chen; John S. Suehle; Chih Chieh Shen; Joseph Bernstein; Cleston Messick; Prasad Chaparala

Correlation of highly accelerated Q_bd tests to TDDB life tests for ultra-thin gate oxides

Yuan Chen
, John S. Suehle
, Chih Chieh Shen
, Joseph Bernstein
, Cleston Messick
, Prasad Chaparala

פרסום מחקרי: פרסום בכתב עת › מאמר מכנס › ביקורת עמיתים

11 ציטוטים ‏(Scopus)

תקציר

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

שפה מקורית	אנגלית
עמודים (מ-עד)	87-91
מספר עמודים	5
כתב עת	Annual Proceedings - Reliability Physics (Symposium)
סטטוס פרסום	פורסם - 1998
פורסם באופן חיצוני	כן
אירוע	Proceedings of the 1998 36th IEEE International Reliability Physics Symposium - Reno, NV, USA משך הזמן: 31 מרץ 1998 → 2 אפר׳ 1998

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

@article{b3a0bdf6f5924a45babdcbb5e0e19e39,

title = "Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides",

abstract = "A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.",

author = "Yuan Chen and Suehle, \{John S.\} and Shen, \{Chih Chieh\} and Joseph Bernstein and Cleston Messick and Prasad Chaparala",

year = "1998",

language = "אנגלית",

pages = "87--91",

journal = "Annual Proceedings - Reliability Physics (Symposium)",

issn = "0099-9512",

note = "Proceedings of the 1998 36th IEEE International Reliability Physics Symposium ; Conference date: 31-03-1998 Through 02-04-1998",

}

TY - JOUR

T1 - Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

AU - Chen, Yuan

AU - Suehle, John S.

AU - Shen, Chih Chieh

AU - Bernstein, Joseph

AU - Messick, Cleston

AU - Chaparala, Prasad

PY - 1998

Y1 - 1998

N2 - A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

AB - A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.

UR - https://www.scopus.com/pages/publications/0031649738

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.conferencearticle???

AN - SCOPUS:0031649738

SN - 0099-9512

SP - 87

EP - 91

JO - Annual Proceedings - Reliability Physics (Symposium)

JF - Annual Proceedings - Reliability Physics (Symposium)

T2 - Proceedings of the 1998 36th IEEE International Reliability Physics Symposium

Y2 - 31 March 1998 through 2 April 1998

ER -

Correlation of highly accelerated Qbd tests to TDDB life tests for ultra-thin gate oxides

תקציר

קבצים וקישורים אחרים

טביעת אצבע

פורמט ציטוט ביבליוגרפי

Correlation of highly accelerated Q_bd tests to TDDB life tests for ultra-thin gate oxides