Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle; E. M. Vogel; M. D. Edelstein; C. A. Richter; N. V. Nguyen; I. Levin; D. L. Kaiser; H. Wu; J. B. Bernstein

Challenges of high-κ gate dielectrics for future MOS devices

J. S. Suehle
, E. M. Vogel
, M. D. Edelstein
, C. A. Richter
, N. V. Nguyen
, I. Levin
, D. L. Kaiser
, H. Wu
, J. B. Bernstein

פרסום מחקרי: תוצר מחקר מכנס › הרצאה › ביקורת עמיתים

16 ציטוטים ‏(Scopus)

תקציר

A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

שפה מקורית	אנגלית
עמודים	90-93
מספר עמודים	4
סטטוס פרסום	פורסם - 2001
פורסם באופן חיצוני	כן
אירוע	6th International Symposium on Plasma- and Process-Induced Damage - Monterrrey, CA, ארצות הברית משך הזמן: 13 מאי 2001 → 15 מאי 2001

כנס

כנס	6th International Symposium on Plasma- and Process-Induced Damage
מדינה/אזור	ארצות הברית
עיר	Monterrrey, CA
תקופה	13/05/01 → 15/05/01

קבצים וקישורים אחרים

Link to publication in Scopus

פורמט ציטוט ביבליוגרפי

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title = "Challenges of high-κ gate dielectrics for future MOS devices",

abstract = "A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.",

author = "Suehle, \{J. S.\} and Vogel, \{E. M.\} and Edelstein, \{M. D.\} and Richter, \{C. A.\} and Nguyen, \{N. V.\} and I. Levin and Kaiser, \{D. L.\} and H. Wu and Bernstein, \{J. B.\}",

year = "2001",

language = "אנגלית",

pages = "90--93",

note = "6th International Symposium on Plasma- and Process-Induced Damage ; Conference date: 13-05-2001 Through 15-05-2001",

}

TY - CONF

T1 - Challenges of high-κ gate dielectrics for future MOS devices

AU - Suehle, J. S.

AU - Vogel, E. M.

AU - Edelstein, M. D.

AU - Richter, C. A.

AU - Nguyen, N. V.

AU - Levin, I.

AU - Kaiser, D. L.

AU - Wu, H.

AU - Bernstein, J. B.

PY - 2001

Y1 - 2001

N2 - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

AB - A study on requirements and challenges associated with high permittivity gate dielectrics for metal oxide semiconductor devices was presented. Issues related to processing, dielectric constant, capacitance, bandgap, tunnel current and reliability were discussed. The replacement of silicon dioxide in gates with dielectric materials of high permittivity was found to be difficult for integrated circuit manufacturing.

UR - https://www.scopus.com/pages/publications/0034835458

M3 - ???researchoutput.researchoutputtypes.contributiontoconference.paper???

AN - SCOPUS:0034835458

SP - 90

EP - 93

T2 - 6th International Symposium on Plasma- and Process-Induced Damage

Y2 - 13 May 2001 through 15 May 2001

ER -

Challenges of high-κ gate dielectrics for future MOS devices

תקציר

כנס

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