X-Γ indirect intersubband transitions in type II GaAs/AlAs superlattices

A. Fenigstein; E. Finkman; G. Bahir; S. E. Schacham

doi:10.1063/1.117476

X-Γ indirect intersubband transitions in type II GaAs/AlAs superlattices

A. Fenigstein, E. Finkman, G. Bahir, S. E. Schacham

Department of Electrical and Electronics Engineering

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Abstract

Intersubband transitions indirect in both real and momentum spaces were observed in GaAs/AlAs type II short period superlattices. Significant absorption of normal incident radiation, with "forbidden" polarization was measured, in addition to absorption in the "allowed" configuration. The transition energy shows a strong temperature dependence. This absorption is attributed to X-Γ transition Both doped and undoped samples were investigated. Normal incidence absorption is stronger for the doped superlattices. Simulations using a two band model show good agreement to experimental data.

Original language	English
Pages (from-to)	1758-1760
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	12
DOIs	https://doi.org/10.1063/1.117476
State	Published - 16 Sep 1996

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X-Γ indirect intersubband transitions in type II GaAs/AlAs superlattices

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