W-Band Rectenna Coupled with Low-Barrier Mott Diode

Boris Kapilevich; Vladimir Shashkin; Boris Litvak; Gil Yemini; Ariel Etinger; Danny Hardon; Yosef Pinhasi

doi:10.1109/LMWC.2016.2585557

W-Band Rectenna Coupled with Low-Barrier Mott Diode

Boris Kapilevich, Vladimir Shashkin, Boris Litvak, Gil Yemini, Ariel Etinger, Danny Hardon, Yosef Pinhasi

Department of Electrical and Electronics Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).

Original language	English
Article number	7517354
Pages (from-to)	637-639
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	26
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2016.2585557
State	Published - Aug 2016

Keywords

High frequency rectification
Mott diode
RF-to-DC conversion
load characteristics
rectenna

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10.1109/LMWC.2016.2585557

Cite this

@article{34469dfbbca6486a95cf78592fa073d0,

title = "W-Band Rectenna Coupled with Low-Barrier Mott Diode",

abstract = "Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17\%, which is approximately 5 times higher than the commercial counterpart (Microsemi).",

keywords = "High frequency rectification, Mott diode, RF-to-DC conversion, load characteristics, rectenna",

author = "Boris Kapilevich and Vladimir Shashkin and Boris Litvak and Gil Yemini and Ariel Etinger and Danny Hardon and Yosef Pinhasi",

note = "Publisher Copyright: {\textcopyright} 2001-2012 IEEE.",

year = "2016",

month = aug,

doi = "10.1109/LMWC.2016.2585557",

language = "אנגלית",

volume = "26",

pages = "637--639",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - W-Band Rectenna Coupled with Low-Barrier Mott Diode

AU - Kapilevich, Boris

AU - Shashkin, Vladimir

AU - Litvak, Boris

AU - Yemini, Gil

AU - Etinger, Ariel

AU - Hardon, Danny

AU - Pinhasi, Yosef

PY - 2016/8

Y1 - 2016/8

N2 - Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).

AB - Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).

KW - High frequency rectification

KW - Mott diode

KW - RF-to-DC conversion

KW - load characteristics

KW - rectenna

UR - https://www.scopus.com/pages/publications/84978834411

U2 - 10.1109/LMWC.2016.2585557

DO - 10.1109/LMWC.2016.2585557

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84978834411

SN - 1531-1309

VL - 26

SP - 637

EP - 639

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

IS - 8

M1 - 7517354

ER -

W-Band Rectenna Coupled with Low-Barrier Mott Diode

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Keywords

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