W-Band Rectenna Coupled with Low-Barrier Mott Diode

Boris Kapilevich; Vladimir Shashkin; Boris Litvak; Gil Yemini; Ariel Etinger; Danny Hardon; Yosef Pinhasi

doi:10.1109/LMWC.2016.2585557

W-Band Rectenna Coupled with Low-Barrier Mott Diode

Boris Kapilevich, Vladimir Shashkin, Boris Litvak, Gil Yemini, Ariel Etinger, Danny Hardon, Yosef Pinhasi

Department of Electrical and Electronics Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).

Original language	English
Article number	7517354
Pages (from-to)	637-639
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	26
Issue number	8
DOIs	https://doi.org/10.1109/LMWC.2016.2585557
State	Published - Aug 2016

Keywords

High frequency rectification
Mott diode
RF-to-DC conversion
load characteristics
rectenna

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10.1109/LMWC.2016.2585557

Cite this

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title = "W-Band Rectenna Coupled with Low-Barrier Mott Diode",

abstract = "Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).",

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author = "Boris Kapilevich and Vladimir Shashkin and Boris Litvak and Gil Yemini and Ariel Etinger and Danny Hardon and Yosef Pinhasi",

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AU - Etinger, Ariel

AU - Hardon, Danny

AU - Pinhasi, Yosef

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W-Band Rectenna Coupled with Low-Barrier Mott Diode

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Keywords

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