W-Band Rectenna Coupled with Low-Barrier Mott Diode

Boris Kapilevich, Vladimir Shashkin, Boris Litvak, Gil Yemini, Ariel Etinger, Danny Hardon, Yosef Pinhasi

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Design and characterization of a W-band rectenna, consisting of a 2 × 2 patch sub-array integrated with matching elements and rectifying circuitry is presented. The key element of the rectenna is a Mott diode that has permitted considerable improvement of RF-to-DC conversion efficiency in comparison with commercially available GaAs mm-wave diodes. The experimental setup was equipped by two focusing lenses, allowing a concentration of RF power within the beam spot of a 1 cm diameter at a distance of 1 m. The tuneable W-band source delivering 0.4 W RF CW power was employed to perform large-signal experiments and to measure load characteristics of the rectenna. The measured RF-to-DC conversion efficiency with the single Mott diode is approximately 17%, which is approximately 5 times higher than the commercial counterpart (Microsemi).

Original languageEnglish
Article number7517354
Pages (from-to)637-639
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Issue number8
StatePublished - Aug 2016


  • High frequency rectification
  • Mott diode
  • RF-to-DC conversion
  • load characteristics
  • rectenna


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