Validation of simulated integrated circuit reliability in conjunction with field data

Avshalom Hava, Jin Qin, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A thorough reliability analysis of integrated circuit field failure data, recorded from 2002 to 2009, is utilized in order to generate real failure rates for various device process technologies and feature sizes (or "technology nodes"). The results of this analysis are used to verify Physics-of-Failure (PoF) models and a competing failure approach, as implemented in a new reliability prediction methods - FaRBS (Failure Rate Based Simulation Program with Integrated Circuit Emphasis). Comparison of the simulated and the actual field failure rates demonstrate that the simulation agrees very well with the field failure and a strong correlation of 80% is achieved.

Original languageEnglish
Title of host publicationProceedings of the 2011 - Grand Challenges in Modeling and Simulation Conference, GCMS 2011
Pages362-369
Number of pages8
StatePublished - 2011
Externally publishedYes
Event4th Grand Challenges in Modeling and Simulation Conference, GCMS 2011 - The Hague, Netherlands
Duration: 27 Jun 201130 Jun 2011

Publication series

NameProceedings of the 2011 - Grand Challenges in Modeling and Simulation Conference, GCMS 2011

Conference

Conference4th Grand Challenges in Modeling and Simulation Conference, GCMS 2011
Country/TerritoryNetherlands
CityThe Hague
Period27/06/1130/06/11

Keywords

  • Failure Rate
  • Integrated Circuit
  • Physics-of-Failure
  • Reliability

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