Unpolarized intersubband photocurrent in Te doped GaInAsN/GaAlAs quantum well IR photodetector

Asaf Albo, Dan Fekete, Gad Bahir

Research output: Contribution to journalConference articlepeer-review

4 Scopus citations

Abstract

We report observation of unpolarized intersubband photocurrent (PC) in quantum-well infrared photodetector (QWIP) based on Te doped GaInAsN/AlGaAs multiple-quantum well structures (MQWs). The unpolraized photocurrent spectrum is peaked at 2.4 μm in front and wedge waveguide configuration illumination. Clear PC signals are observed up to room temperature. Reference sample not containing nitrogen with the same MQW structure shows p polarized intersubband photoresponse as expected in the conduction band of III-V semiconductors MQWs.

Original languageEnglish
Pages (from-to)2323-2325
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 2008
Externally publishedYes
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

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