Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress

M. Gurfinkel; J. Suehle; J. B. Bernstein; Y. Shapira; A. J. Lelis; D. Habersat; N. Goldsman

doi:10.1109/IRWS.2006.305209

Ultra-fast measurements of V_TH instability in SiC MOSFETs due to positive and negative constant bias stress

M. Gurfinkel, J. Suehle, J. B. Bernstein, Y. Shapira, A. J. Lelis, D. Habersat, N. Goldsman

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V _TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the V_TH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO₂ interface is proposed.

Original language	English
Title of host publication	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Pages	49-53
Number of pages	5
DOIs	https://doi.org/10.1109/IRWS.2006.305209
State	Published - 2006
Externally published	Yes
Event	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW - South Lake Tahoe, CA, United States Duration: 16 Oct 2006 → 19 Oct 2006

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2006 IEEE International Integrated Reliability Workshop Final Report, IIRW
Country/Territory	United States
City	South Lake Tahoe, CA
Period	16/10/06 → 19/10/06

Access to Document

10.1109/IRWS.2006.305209

Cite this

Gurfinkel, M., Suehle, J., Bernstein, J. B., Shapira, Y., Lelis, A. J., Habersat, D., & Goldsman, N. (2006). Ultra-fast measurements of V_TH instability in SiC MOSFETs due to positive and negative constant bias stress. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW (pp. 49-53). Article 4098686 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2006.305209

@inproceedings{faf5c4fe8be246a9982fa5d86226f9c4,

title = "Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress",

abstract = "One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the VTH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO2 interface is proposed.",

author = "M. Gurfinkel and J. Suehle and Bernstein, {J. B.} and Y. Shapira and Lelis, {A. J.} and D. Habersat and N. Goldsman",

year = "2006",

doi = "10.1109/IRWS.2006.305209",

language = "אנגלית",

isbn = "1424402964",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "49--53",

booktitle = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW",

note = "2006 IEEE International Integrated Reliability Workshop Final Report, IIRW ; Conference date: 16-10-2006 Through 19-10-2006",

}

Gurfinkel, M, Suehle, J, Bernstein, JB, Shapira, Y, Lelis, AJ, Habersat, D & Goldsman, N 2006, Ultra-fast measurements of V_TH instability in SiC MOSFETs due to positive and negative constant bias stress. in 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW., 4098686, IEEE International Integrated Reliability Workshop Final Report, pp. 49-53, 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW, South Lake Tahoe, CA, United States, 16/10/06. https://doi.org/10.1109/IRWS.2006.305209

Ultra-fast measurements of V_TH instability in SiC MOSFETs due to positive and negative constant bias stress. / Gurfinkel, M.; Suehle, J.; Bernstein, J. B. et al.
2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. 2006. p. 49-53 4098686 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-fast measurements of VTH instability in SiC MOSFETs due to positive and negative constant bias stress

AU - Gurfinkel, M.

AU - Suehle, J.

AU - Bernstein, J. B.

AU - Shapira, Y.

AU - Lelis, A. J.

AU - Habersat, D.

AU - Goldsman, N.

PY - 2006

Y1 - 2006

N2 - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the VTH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO2 interface is proposed.

AB - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage instability under normal operation conditions. This phenomenon has been recently studied using dc sweep measurements. In this work, we studied the threshold voltage instability using fast I- V measurements. The results show that under positive bias, V TH shifts to more positive values, while it shifts to more negative values under negative bias. Fast I- V measurements reveal the full extent of the VTH instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. A physical model involving fast transient charge trapping and de-trapping at and near the SiC/SiO2 interface is proposed.

UR - http://www.scopus.com/inward/record.url?scp=41649108445&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2006.305209

DO - 10.1109/IRWS.2006.305209

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:41649108445

SN - 1424402964

SN - 9781424402960

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 49

EP - 53

BT - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW

T2 - 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW

Y2 - 16 October 2006 through 19 October 2006

ER -

Gurfinkel M, Suehle J, Bernstein JB, Shapira Y, Lelis AJ, Habersat D et al. Ultra-fast measurements of V_TH instability in SiC MOSFETs due to positive and negative constant bias stress. In 2006 IEEE International Integrated Reliability Workshop Final Report, IIRW. 2006. p. 49-53. 4098686. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IRWS.2006.305209