TY - GEN
T1 - Ultra-fast characterization of transient gate oxide trapping in SiC MOSFETs
AU - Gurfinkel, M.
AU - Suehle, J.
AU - Bernstein, J. B.
AU - Shapira, Yoram
AU - Lelis, A. J.
AU - Habersat, D.
AU - Goldsman, N.
PY - 2007
Y1 - 2007
N2 - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage and drain current instability under normal operation conditions. This phenomenon has been recently studied using conventional dc measurements. In this work, we studied the threshold voltage and drain current instability in state-of-the-art 4H-SiC MOSFETs using fast I- V measurements. Fast I- V measurements reveal the full extent of the instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. Post oxidation annealing in NO was found to passivate the oxide traps and dramatically reduce instability. A physical model involving fast transient charge trapping and detrapping at and near the SiC/SiO2 interface is proposed.
AB - One of the most important issues that limits the performance and reliability of SiC power MOSFETs is the threshold voltage and drain current instability under normal operation conditions. This phenomenon has been recently studied using conventional dc measurements. In this work, we studied the threshold voltage and drain current instability in state-of-the-art 4H-SiC MOSFETs using fast I- V measurements. Fast I- V measurements reveal the full extent of the instability, underestimated by the dc measurements. Furthermore, fast measurements allow the separation of negative and positive bias stress effects. Post oxidation annealing in NO was found to passivate the oxide traps and dramatically reduce instability. A physical model involving fast transient charge trapping and detrapping at and near the SiC/SiO2 interface is proposed.
KW - Post oxidation annealing
KW - Silicon carbide
KW - Threshold voltage instability
UR - http://www.scopus.com/inward/record.url?scp=34548710771&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2007.369934
DO - 10.1109/RELPHY.2007.369934
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AN - SCOPUS:34548710771
SN - 1424409195
SN - 9781424409198
T3 - Annual Proceedings - Reliability Physics (Symposium)
SP - 462
EP - 466
BT - 2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual
T2 - 45th Annual IEEE International Reliability Physics Symposium 2007, IRPS
Y2 - 15 April 2007 through 19 April 2007
ER -