THREE-DIMENSIONAL ANALYTICAL MODEL FOR PHOTOVOLTAIC DETECTOR ARRAYS.

D. Levy; S. E. Schacham; I. Kidron

doi:10.1109/iedm.1986.191195

THREE-DIMENSIONAL ANALYTICAL MODEL FOR PHOTOVOLTAIC DETECTOR ARRAYS.

D. Levy
, S. E. Schacham
, I. Kidron

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Decreasing dimensions along with increasing number of elements in imaging photodiode arrays result in degradation of spatial resolution and sensitivity due to lateral transport. This effect is modelled using a novel three-dimensional (3-D) analytical solution of the continuity equation. The model enables the full 3-D analysis of lateral transport as manifested in excess carrier distribution photocurrent, self- and cross-responsivities. Calculated results for the 3-D case deviate fundamentally from those predicted by the 1-D model. The 3-D model succeeds in explaining measured reduced quantum efficiency of small-area detectors. It also predicts the observed limited effect of diffusion length on self-responsivity and cutoff wavelength. Calculated spectral responses fit data measured on InSb and HgCdTe test arrays extremely well.

Original language	English
Pages (from-to)	373-376
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1986.191195
State	Published - 1986
Externally published	Yes

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10.1109/iedm.1986.191195

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title = "THREE-DIMENSIONAL ANALYTICAL MODEL FOR PHOTOVOLTAIC DETECTOR ARRAYS.",

abstract = "Decreasing dimensions along with increasing number of elements in imaging photodiode arrays result in degradation of spatial resolution and sensitivity due to lateral transport. This effect is modelled using a novel three-dimensional (3-D) analytical solution of the continuity equation. The model enables the full 3-D analysis of lateral transport as manifested in excess carrier distribution photocurrent, self- and cross-responsivities. Calculated results for the 3-D case deviate fundamentally from those predicted by the 1-D model. The 3-D model succeeds in explaining measured reduced quantum efficiency of small-area detectors. It also predicts the observed limited effect of diffusion length on self-responsivity and cutoff wavelength. Calculated spectral responses fit data measured on InSb and HgCdTe test arrays extremely well.",

author = "D. Levy and Schacham, \{S. E.\} and I. Kidron",

year = "1986",

doi = "10.1109/iedm.1986.191195",

language = "אנגלית",

pages = "373--376",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - THREE-DIMENSIONAL ANALYTICAL MODEL FOR PHOTOVOLTAIC DETECTOR ARRAYS.

AU - Levy, D.

AU - Schacham, S. E.

AU - Kidron, I.

PY - 1986

Y1 - 1986

N2 - Decreasing dimensions along with increasing number of elements in imaging photodiode arrays result in degradation of spatial resolution and sensitivity due to lateral transport. This effect is modelled using a novel three-dimensional (3-D) analytical solution of the continuity equation. The model enables the full 3-D analysis of lateral transport as manifested in excess carrier distribution photocurrent, self- and cross-responsivities. Calculated results for the 3-D case deviate fundamentally from those predicted by the 1-D model. The 3-D model succeeds in explaining measured reduced quantum efficiency of small-area detectors. It also predicts the observed limited effect of diffusion length on self-responsivity and cutoff wavelength. Calculated spectral responses fit data measured on InSb and HgCdTe test arrays extremely well.

AB - Decreasing dimensions along with increasing number of elements in imaging photodiode arrays result in degradation of spatial resolution and sensitivity due to lateral transport. This effect is modelled using a novel three-dimensional (3-D) analytical solution of the continuity equation. The model enables the full 3-D analysis of lateral transport as manifested in excess carrier distribution photocurrent, self- and cross-responsivities. Calculated results for the 3-D case deviate fundamentally from those predicted by the 1-D model. The 3-D model succeeds in explaining measured reduced quantum efficiency of small-area detectors. It also predicts the observed limited effect of diffusion length on self-responsivity and cutoff wavelength. Calculated spectral responses fit data measured on InSb and HgCdTe test arrays extremely well.

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

THREE-DIMENSIONAL ANALYTICAL MODEL FOR PHOTOVOLTAIC DETECTOR ARRAYS.

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