Abstract
Decreasing dimensions along with increasing number of elements in imaging photodiode arrays result in degradation of spatial resolution and sensitivity due to lateral transport. This effect is modelled using a novel three-dimensional (3-D) analytical solution of the continuity equation. The model enables the full 3-D analysis of lateral transport as manifested in excess carrier distribution photocurrent, self- and cross-responsivities. Calculated results for the 3-D case deviate fundamentally from those predicted by the 1-D model. The 3-D model succeeds in explaining measured reduced quantum efficiency of small-area detectors. It also predicts the observed limited effect of diffusion length on self-responsivity and cutoff wavelength. Calculated spectral responses fit data measured on InSb and HgCdTe test arrays extremely well.
Original language | English |
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Pages (from-to) | 373-376 |
Number of pages | 4 |
Journal | Technical Digest - International Electron Devices Meeting |
DOIs | |
State | Published - 1986 |
Externally published | Yes |