The TeraMOS sensor for monolithic passive THz imagers

D. Corcos, I. Brouk, M. Malits, A. Svetlitza, S. Stolyarova, A. Abramovich, E. Farber, N. Bachar, D. Elad, Y. Nemirovsky

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

20 Scopus citations

Abstract

We report of a new sensor, which is based on several leading technologies: THz photonics, CMOS-SOI (Silicon-on-Insulator) and MEMS/NEMS (Micro/Nano Electro Mechanical Systems). By introducing the TeraMOS sensor, which may be directly integrated with the CMOS-SOI readout circuitry, we expect to achieve a breakthrough in Terahertz passive imaging (0.5-1.5 THz) both in performance and cost. NEP (Noise Equivalent Power) of the order of 1 pW/Hz 1/2 and NETD (Noise Equivalent Temperature Difference) of ∼0.5K is expected at room temperature. Preliminary electro-optical measurements are presented.

Original languageEnglish
Title of host publication2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
DOIs
StatePublished - 2011
Event2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011 - Tel Aviv, Israel
Duration: 7 Nov 20119 Nov 2011

Publication series

Name2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011

Conference

Conference2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems, COMCAS 2011
Country/TerritoryIsrael
CityTel Aviv
Period7/11/119/11/11

Keywords

  • CMOS-SOI-NEMS
  • FSS
  • Terahertz antennas
  • Terahertz sensors

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