The Effects of Process Variations and BTI in Packaged FinFET Devices

E. Bender, J. B. Bernstein, D. S. Boning

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

A correlation between device reliability and process variations in packaged devices is identified. Weibull distribution statistics are used in a novel method for finding the limit of precision possible for time-to-failure averaging. This study identifies increase of variance due to process variation with size scaling in three generations of technologies. There is a linear decrease in precision threshold which correlates to the size of the device. The results present a concern of BTI in technologies from 16nm and below.

Original languageEnglish
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: 26 Mar 202330 Mar 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period26/03/2330/03/23

Keywords

  • BTI
  • FPGA
  • FinFET
  • Process Variations
  • RO
  • SHE

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