The Deal Fast-Surface States Are probably Deep-Level Impurities in the Semiconductor

Herbert J. Kump, Joseph B. Bernstein

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

A comparison is made between the widely held model that surface states (as described by Deal, et al.) are states that lie at the Si-Si02 interface (e.g., dangling bonds) and a model based on deep levels (heavy metals) in the semiconductor. It is shown that calculations based on the two models measure the same quantity but that a model based on dangling bonds is inconsistent with an observed dependence on oxide thickness. Deep-level impurities introduced during or after oxide growth, however, are expected to show a dependence on oxide thickness. Furthermore, the onset of the surface states is in agreement with that known for copper at 0.52 eV as measured from the valence band edge.

Original languageEnglish
Pages (from-to)17-22
Number of pages6
JournalIEEE Circuits and Devices Magazine
Volume1
Issue number6
DOIs
StatePublished - Nov 1985

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