TY - JOUR
T1 - The Deal Fast-Surface States Are probably Deep-Level Impurities in the Semiconductor
AU - Kump, Herbert J.
AU - Bernstein, Joseph B.
PY - 1985/11
Y1 - 1985/11
N2 - A comparison is made between the widely held model that surface states (as described by Deal, et al.) are states that lie at the Si-Si02 interface (e.g., dangling bonds) and a model based on deep levels (heavy metals) in the semiconductor. It is shown that calculations based on the two models measure the same quantity but that a model based on dangling bonds is inconsistent with an observed dependence on oxide thickness. Deep-level impurities introduced during or after oxide growth, however, are expected to show a dependence on oxide thickness. Furthermore, the onset of the surface states is in agreement with that known for copper at 0.52 eV as measured from the valence band edge.
AB - A comparison is made between the widely held model that surface states (as described by Deal, et al.) are states that lie at the Si-Si02 interface (e.g., dangling bonds) and a model based on deep levels (heavy metals) in the semiconductor. It is shown that calculations based on the two models measure the same quantity but that a model based on dangling bonds is inconsistent with an observed dependence on oxide thickness. Deep-level impurities introduced during or after oxide growth, however, are expected to show a dependence on oxide thickness. Furthermore, the onset of the surface states is in agreement with that known for copper at 0.52 eV as measured from the valence band edge.
UR - http://www.scopus.com/inward/record.url?scp=0022151199&partnerID=8YFLogxK
U2 - 10.1109/MCD.1985.6311743
DO - 10.1109/MCD.1985.6311743
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:0022151199
SN - 8755-3996
VL - 1
SP - 17
EP - 22
JO - IEEE Circuits and Devices Magazine
JF - IEEE Circuits and Devices Magazine
IS - 6
ER -