@inproceedings{e0c3ad1b44944c9c8b6d08124c2dfd4e,
title = "The contribution of HFO 2 bulk oxide traps to dynamic NBTI in PMOSFET'S",
abstract = "The Negative Bias Temperature Instability (NBTI) under pulsed bias stress conditions of devices with HfO 2 and SiO 2 gate dielectrics are studied and compared. The pulsed stress frequency responses of threshold voltage shift (ΔV th) are quite different for both dielectrics as well as the acceleration parameters. Bulk traps in the HfO 2 film is used to explain these differences. Furthermore, it is shown that cautions must be taken when extrapolating the device lifetime of HfO 2 gate dielectrics.",
keywords = "Bulk oxide traps, Hafnium oxide, High-k gate dielectrics, Negative bias temperature instability",
author = "B. Zhu and Suehle, {J. S.} and E. Vogel and Bernstein, {J. B.}",
year = "2005",
language = "אנגלית",
isbn = "0780388038",
series = "IEEE International Reliability Physics Symposium Proceedings",
pages = "533--537",
booktitle = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual",
note = "2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual ; Conference date: 17-04-2005 Through 21-04-2005",
}