Temperature independent quantum well fet with delta channel doping

P. G. Young; R. A. Mena; S. A. Alterovitz; S. E. Schacham; E. J. Haugland

doi:10.1049/el:19920858

Temperature independent quantum well fet with delta channel doping

P. G. Young, R. A. Mena, S. A. Alterovitz, S. E. Schacham, E. J. Haugland

Research output: Contribution to journal › Article › peer-review

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Abstract

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant G_max and F_max were measured over the temperature range 300–70K.

Original language	English
Pages (from-to)	1352-1353
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	14
DOIs	https://doi.org/10.1049/el:19920858
State	Published - 2 Jul 1992
Externally published	Yes

Keywords

Field-effect transistors
Semiconductor devices and materials
Transistors

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10.1049/el:19920858

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abstract = "A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.",

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AU - Young, P. G.

AU - Mena, R. A.

AU - Alterovitz, S. A.

AU - Schacham, S. E.

AU - Haugland, E. J.

PY - 1992/7/2

Y1 - 1992/7/2

N2 - A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

AB - A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

KW - Field-effect transistors

KW - Semiconductor devices and materials

KW - Transistors

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Temperature independent quantum well fet with delta channel doping

Abstract

Keywords

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