Abstract
A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.
Original language | English |
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Pages (from-to) | 1352-1353 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 28 |
Issue number | 14 |
DOIs | |
State | Published - 2 Jul 1992 |
Externally published | Yes |
Keywords
- Field-effect transistors
- Semiconductor devices and materials
- Transistors