Temperature independent quantum well fet with delta channel doping

P. G. Young, R. A. Mena, S. A. Alterovitz, S. E. Schacham, E. J. Haugland

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300–1·4 K. Transistors were RF tested using on-wafer probing and a constant Gmax and Fmax were measured over the temperature range 300–70K.

Original languageEnglish
Pages (from-to)1352-1353
Number of pages2
JournalElectronics Letters
Issue number14
StatePublished - 2 Jul 1992
Externally publishedYes


  • Field-effect transistors
  • Semiconductor devices and materials
  • Transistors


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