Temperature dependence of soft breakdown and wear-out in sub-3 nm SiO₂ films

Keyphrases

• Temperature Effect 100%
• Wearout 100%
• Soft Breakdown 100%
• Breakdown Mode 100%
• SiO2 Film 100%
• Stress Voltage 100%
• Device Area 100%
• Sub-3 nm Particles 100%
• Strong Dependence 33%
• Temperature Range 33%
• Low Voltage 33%
• I-V Curve 33%
• Current Noise 33%
• Increased Temperature 33%
• Low Stress 33%
• Stress Temperature 33%
• Small Devices 33%
• Time-dependent Dielectric Breakdown 33%
• Temperature Acceleration 33%
• Thermal Activation Energy 33%
• First Occurrence 33%
• Ultrathin Films 33%
• Gate Voltage 33%
• Thermal Acceleration 33%
• Time Characteristics 33%
• Breakdown Criteria 33%
• Thermal Breakdown 33%
• Device Stress 33%

Engineering

• Temperature Dependence 100%
• Sio2 Film 100%
• Temperature Range 50%
• Activation Energy 50%
• Thin Films 50%
• Dielectrics 50%
• Characteristic Time 50%
• Current-Voltage Characteristic 50%
• Gate Voltage 50%
• Temperature Stress 50%

Material Science

• Film 100%
• Activation Energy 50%
• Current-Voltage Characteristic 50%
• Electrical Breakdown 50%
• Ultrathin Film 50%