TY - GEN
T1 - Temperature dependence of Ron,sp in silicon carbide and GaAs Schottky diode
AU - Luo, Ji
AU - Chung, Kuan Jung
AU - Hu, Huang
AU - Bernstein, J. B.
N1 - Publisher Copyright:
© 2002 IEEE.
PY - 2002
Y1 - 2002
N2 - The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.
AB - The critical properties of power devices are high reverse breakdown voltage and low forward ON state resistance, Ron,sp, during high forward current density operation. Both of these parameters are very sensitive to temperature. Nowadays silicon carbide (SiC) and GaAs are two most important materials for power device applications. SiC has been widely accepted as being superior to GaAs because it has much higher electric breakdown field, saturated electron drift velocity and thermal conductivity. In this work, the electrical performance and reliability of SiC Schottky diodes (SD) are evaluated and compared to commercially available GaAs SDs. High temperature device characterization has been performed. The specific on resistance Ron,sp was found to increase with temperature according to T0.72 dependence for GaAs, T1.89 for SiC. The strong temperature dependence of Ron,sp is consistent with phonon scattering theory. Based on Baliga's figure-of-merit (BFOM) model, our result shows that under higher operating temperature (> 210°C) the GaAs devices have lower Ron,sp than SiC, thus, it may be preferable to use GaAs over SiC for some high temperature power applications.
KW - Conducting materials
KW - Current density
KW - Electric breakdown
KW - Electron mobility
KW - Gallium arsenide
KW - Schottky diodes
KW - Silicon carbide
KW - Temperature dependence
KW - Temperature sensors
KW - Thermal conductivity
UR - http://www.scopus.com/inward/record.url?scp=84949209421&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2002.996678
DO - 10.1109/RELPHY.2002.996678
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AN - SCOPUS:0036085360
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 425
EP - 426
BT - 2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - Proceedings of the 2002 40th annual IEEE International Relaibility Physics Symposium Proceedings
Y2 - 7 April 2002 through 11 April 2002
ER -