Study of transistor and product NBTI lifetime distributions

Jin Qin; Baoguang Yan; Yossi Shoshany; Druker Roy; Hezi Rahamim; Haim Marom; Joseph B. Bernstein

doi:10.1109/IRWS.2008.4796134

Study of transistor and product NBTI lifetime distributions

Jin Qin, Baoguang Yan, Yossi Shoshany, Druker Roy, Hezi Rahamim, Haim Marom, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution is found to have the best fit. Product level NBTI lifetime distribution is studied through rare event simulation. Result shows that Weibull distribution has a better fit than lognormal distribution at product level. Acceleration test result of 90nm SRAM cache NBTI degradation is compared with the simulation results and a good agreement is observed.

Original language	English
Title of host publication	2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008
Pages	64-67
Number of pages	4
DOIs	https://doi.org/10.1109/IRWS.2008.4796134 https://doi.org/10.1109/IRWS.2008.4796088
State	Published - 2008
Externally published	Yes
Event	2008 IEEE International Integrated Reliability Workshop, IRW 2008 - South Lake Tahoe, CA, United States Duration: 12 Oct 2008 → 16 Oct 2008

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2008 IEEE International Integrated Reliability Workshop, IRW 2008
Country/Territory	United States
City	South Lake Tahoe, CA
Period	12/10/08 → 16/10/08

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Qin, J., Yan, B., Shoshany, Y., Roy, D., Rahamim, H., Marom, H., & Bernstein, J. B. (2008). Study of transistor and product NBTI lifetime distributions. In 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008 (pp. 64-67). Article 4796088 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IRWS.2008.4796134, https://doi.org/10.1109/IRWS.2008.4796088

@inproceedings{4510eee2d7ea469197e589cbe47a25a7,

title = "Study of transistor and product NBTI lifetime distributions",

abstract = "NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution is found to have the best fit. Product level NBTI lifetime distribution is studied through rare event simulation. Result shows that Weibull distribution has a better fit than lognormal distribution at product level. Acceleration test result of 90nm SRAM cache NBTI degradation is compared with the simulation results and a good agreement is observed.",

author = "Jin Qin and Baoguang Yan and Yossi Shoshany and Druker Roy and Hezi Rahamim and Haim Marom and Bernstein, {Joseph B.}",

year = "2008",

doi = "10.1109/IRWS.2008.4796134",

language = "אנגלית",

isbn = "9781424421954",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "64--67",

booktitle = "2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008",

note = "2008 IEEE International Integrated Reliability Workshop, IRW 2008 ; Conference date: 12-10-2008 Through 16-10-2008",

}

Qin, J, Yan, B, Shoshany, Y, Roy, D, Rahamim, H, Marom, H & Bernstein, JB 2008, Study of transistor and product NBTI lifetime distributions. in 2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008., 4796088, IEEE International Integrated Reliability Workshop Final Report, pp. 64-67, 2008 IEEE International Integrated Reliability Workshop, IRW 2008, South Lake Tahoe, CA, United States, 12/10/08. https://doi.org/10.1109/IRWS.2008.4796134, https://doi.org/10.1109/IRWS.2008.4796088

Study of transistor and product NBTI lifetime distributions. / Qin, Jin; Yan, Baoguang; Shoshany, Yossi et al.
2008 IEEE International Integrated Reliability Workshop Final Report, IRW 2008. 2008. p. 64-67 4796088 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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Study of transistor and product NBTI lifetime distributions

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