Study of the absorption of electromagnetic radiation by 3d, vacuum-packaged, nano-machined cmos transistors for uncooled ir sensing

Keyphrases

• Transistor 100%
• Uncooled 100%
• Electromagnetic Radiation 100%
• SOI CMOS 100%
• Thermal Sensor 100%
• Micromachining 100%
• Design Rules 50%
• Sensing Element 50%
• Simulation-based 50%
• Technology Node 50%
• Wafer Level 50%
• Silicon Substrate 50%
• Advanced CMOS 50%
• Domestic Use 50%
• Electromagnetic Wave Absorption 50%
• Industrial Use 50%
• SOI Transistor 50%
• High Absorption Coefficient 50%
• Vacuum Packaging 50%
• Nanomachines 50%
• CMOS Transistor 50%
• 130nm Technology 50%
• Machining Process 50%
• High-performance Sensor 50%

Engineering

• Thermal Sensor 100%
• Simulation Tool 50%
• Design Rule 50%
• Nodes 50%
• Thin Layer 50%
• Silicon Substrate 50%
• Sensing Element 50%
• Absorptivity 50%
• Absorption Coefficient 50%

Material Science

• Transistor 100%
• Silicon 33%
• Machining 33%