Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

S. Maimon; G. M. Cohen; E. Finkman; G. Bahir; D. Ritter; S. E. Schacham

doi:10.1063/1.122006

Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

S. Maimon, G. M. Cohen, E. Finkman, G. Bahir, D. Ritter, S. E. Schacham

Department of Electrical and Electronics Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λ_P=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of D_λ^*(BLIP)=3.2×10¹⁰cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

Original language	English
Pages (from-to)	800-802
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	6
DOIs	https://doi.org/10.1063/1.122006
State	Published - 1998

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title = "Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection",

abstract = "A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.",

author = "S. Maimon and Cohen, \{G. M.\} and E. Finkman and G. Bahir and D. Ritter and Schacham, \{S. E.\}",

year = "1998",

doi = "10.1063/1.122006",

language = "אנגלית",

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journal = "Applied Physics Letters",

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T1 - Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

AU - Maimon, S.

AU - Cohen, G. M.

AU - Finkman, E.

AU - Bahir, G.

AU - Ritter, D.

AU - Schacham, S. E.

PY - 1998

Y1 - 1998

N2 - A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

AB - A high detectivity multiquantum well midinfrared photodetector is reported. It is based on a strain compensated InGaAs/InGaP on InP structure, using bound-to-continuum intersubband absorption, with λP=4.9μm and ∼0.5 μm full width at half maximum. This design is unique by enabling a large critical thickness, thus increasing the quantum efficiency. Photodetectors with background-limited performance (BLIP) with detectivity of Dλ*(BLIP)=3.2×1010cm Hz /W up to 110 K, with only ten quantum well periods were implemented. Arguments are given to predict an optimized background-limited performance for this design up to 135 K.

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JO - Applied Physics Letters

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IS - 6

ER -

Strain compensated InGaAs/InGaP quantum well infrared detector for midwavelength band detection

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