SRAM stability analysis considering gate oxide SBD, NBTI and HCI

Jin Qin; Xiaojun Li; Joseph B. Bernstein

doi:10.1109/IRWS.2007.4469217

SRAM stability analysis considering gate oxide SBD, NBTI and HCI

Jin Qin, Xiaojun Li, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

22 Scopus citations

Abstract

For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized. Multiple failure mechanisms degradation effect was also studied in regard of SRAM cell operation. Simulation results showed that gate oxide SBD is the dominating failure mechanism which causes SRAM stability and operation degradation, NBTI and HCI have much less effect.

Original language	English
Title of host publication	2007 IEEE International Integrated Reliability Workshop Final Report, IRW
Pages	33-37
Number of pages	5
DOIs	https://doi.org/10.1109/IRWS.2007.4469217
State	Published - 2007
Externally published	Yes
Event	2007 IEEE International Integrated Reliability Workshop, IRW - S. Lake Tahoe, CA, United States Duration: 15 Oct 2007 → 18 Oct 2007

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report

Conference

Conference	2007 IEEE International Integrated Reliability Workshop, IRW
Country/Territory	United States
City	S. Lake Tahoe, CA
Period	15/10/07 → 18/10/07

Access to Document

10.1109/IRWS.2007.4469217

Cite this

@inproceedings{c0d774462d64414c8cadb519effe2034,

title = "SRAM stability analysis considering gate oxide SBD, NBTI and HCI",

abstract = "For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized. Multiple failure mechanisms degradation effect was also studied in regard of SRAM cell operation. Simulation results showed that gate oxide SBD is the dominating failure mechanism which causes SRAM stability and operation degradation, NBTI and HCI have much less effect.",

author = "Jin Qin and Xiaojun Li and Bernstein, {Joseph B.}",

year = "2007",

doi = "10.1109/IRWS.2007.4469217",

language = "אנגלית",

isbn = "1424411726",

series = "IEEE International Integrated Reliability Workshop Final Report",

pages = "33--37",

booktitle = "2007 IEEE International Integrated Reliability Workshop Final Report, IRW",

note = "2007 IEEE International Integrated Reliability Workshop, IRW ; Conference date: 15-10-2007 Through 18-10-2007",

}

Qin, J, Li, X & Bernstein, JB 2007, SRAM stability analysis considering gate oxide SBD, NBTI and HCI. in 2007 IEEE International Integrated Reliability Workshop Final Report, IRW., 4469217, IEEE International Integrated Reliability Workshop Final Report, pp. 33-37, 2007 IEEE International Integrated Reliability Workshop, IRW, S. Lake Tahoe, CA, United States, 15/10/07. https://doi.org/10.1109/IRWS.2007.4469217

SRAM stability analysis considering gate oxide SBD, NBTI and HCI. / Qin, Jin; Li, Xiaojun; Bernstein, Joseph B.
2007 IEEE International Integrated Reliability Workshop Final Report, IRW. 2007. p. 33-37 4469217 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - SRAM stability analysis considering gate oxide SBD, NBTI and HCI

AU - Qin, Jin

AU - Li, Xiaojun

AU - Bernstein, Joseph B.

PY - 2007

Y1 - 2007

N2 - For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized. Multiple failure mechanisms degradation effect was also studied in regard of SRAM cell operation. Simulation results showed that gate oxide SBD is the dominating failure mechanism which causes SRAM stability and operation degradation, NBTI and HCI have much less effect.

AB - For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized. Multiple failure mechanisms degradation effect was also studied in regard of SRAM cell operation. Simulation results showed that gate oxide SBD is the dominating failure mechanism which causes SRAM stability and operation degradation, NBTI and HCI have much less effect.

UR - http://www.scopus.com/inward/record.url?scp=49549094695&partnerID=8YFLogxK

U2 - 10.1109/IRWS.2007.4469217

DO - 10.1109/IRWS.2007.4469217

M3 - ???researchoutput.researchoutputtypes.contributiontobookanthology.conference???

AN - SCOPUS:49549094695

SN - 1424411726

SN - 9781424411726

T3 - IEEE International Integrated Reliability Workshop Final Report

SP - 33

EP - 37

BT - 2007 IEEE International Integrated Reliability Workshop Final Report, IRW

T2 - 2007 IEEE International Integrated Reliability Workshop, IRW

Y2 - 15 October 2007 through 18 October 2007

ER -

SRAM stability analysis considering gate oxide SBD, NBTI and HCI

Abstract

Publication series

Conference

Access to Document

Other files and links

Fingerprint

Cite this