SRAM circuit-failure modeling and reliability simulation with SPICE

Keyphrases

• Model Simulation 100%
• Simulation Program 100%
• Circuit Failure 100%
• Failure Model 100%
• Integrated Circuits 100%
• Reliability Simulation 100%
• SRAM Circuit 100%
• Transistor 83%
• Time-dependent Dielectric Breakdown 33%
• Equivalent Circuit Model 33%
• Hot Carrier Injection 33%
• Circuit Reliability 33%
• Accelerated Lifetime Model 33%
• Negative Bias Temperature Instability 33%
• Failure Behavior 33%
• Modeling Techniques 16%
• Voltage Transfer Characteristics 16%
• 1-bit 16%
• Semiconductors 16%
• Terminal Voltage 16%
• Failure Mechanism 16%
• Simulation-based Design 16%
• Reliability Modeling 16%
• Wearout Mechanisms 16%
• Design Guidelines 16%
• Performance Reliability 16%
• Model Design 16%
• Cell State 16%
• Lifetime Value 16%
• Circuit Lifetime 16%
• Damage Effect 16%
• Injection Time 16%
• Performance Behavior 16%
• Simulation Analysis 16%
• Cell Voltage 16%
• Practical Design 16%
• Model Circuit 16%
• VLSI Circuits 16%
• Current Stress 16%
• Mechanism Simulation 16%
• Functional Block 16%
• Cell State Transition 16%
• Equivalent Circuit Simulation 16%
• Sense Amplifier 16%
• Cell Stability 16%
• Circuit Performance 16%
• Operation Sequence 16%
• Reliability Tradeoffs 16%
• SRAM Cell 16%
• Pre-charge 16%
• CMOS VLSI 16%
• Stress Profile 16%
• Reliability Design 16%
• Voltage Stress 16%
• Equivalent Circuit Modeling 16%

Engineering

• Simulation Program 100%
• Integrated Circuit 100%
• Dielectrics 33%
• Equivalent Circuit Model 33%
• Hot Carrier Injection 33%
• Negative-Bias Temperature Instability 33%
• Failure Behavior 33%
• Computer Simulation 16%
• Circuit Simulation 16%
• Terminal Voltage 16%
• Equivalent Circuit 16%
• Failure Mechanism 16%
• Design Guideline 16%
• Sense Amplifier 16%
• Functional Block 16%
• Cell State 16%
• Circuit Designer 16%
• Circuit Performance 16%
• Injection Time 16%
• VLSI Circuits 16%