Split-well resonant-phonon terahertz quantum cascade laser

Shiran Levy; Nathalie Lander Gower; Silvia Piperno; Sadhvikas J. Addamane; John L. Reno; Asaf Albo

doi:10.1364/OE.486446

Split-well resonant-phonon terahertz quantum cascade laser

Shiran Levy, Nathalie Lander Gower, Silvia Piperno, Sadhvikas J. Addamane, John L. Reno, Asaf Albo

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al_0.3Ga_0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

Original language	English
Pages (from-to)	22274-22283
Number of pages	10
Journal	Optics Express
Volume	31
Issue number	14
DOIs	https://doi.org/10.1364/OE.486446
State	Published - 3 Jul 2023
Externally published	Yes

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title = "Split-well resonant-phonon terahertz quantum cascade laser",

abstract = "We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al0.3Ga0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.",

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T1 - Split-well resonant-phonon terahertz quantum cascade laser

AU - Levy, Shiran

AU - Gower, Nathalie Lander

AU - Piperno, Silvia

AU - Addamane, Sadhvikas J.

AU - Reno, John L.

AU - Albo, Asaf

PY - 2023/7/3

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AB - We present a highly diagonal “split-well resonant-phonon” (SWRP) active region design for GaAs/Al0.3Ga0.7As terahertz quantum cascade lasers (THz-QCLs). Negative differential resistance is observed at room temperature, which indicates the suppression of thermally activated leakage channels. The overlap between the doped region and the active level states is reduced relative to that of the split-well direct-phonon (SWDP) design. The energy gap between the lower laser level (LLL) and the injector is kept at 36 meV, enabling a fast depopulation of the LLL. Within this work, we investigated the temperature performance and potential of this structure.

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Split-well resonant-phonon terahertz quantum cascade laser

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