Split-well direct-phonon terahertz quantum cascade lasers

Asaf Albo; Yuri V. Flores; Qing Hu; John L. Reno

doi:10.1063/1.5089854

Split-well direct-phonon terahertz quantum cascade lasers

Asaf Albo, Yuri V. Flores, Qing Hu, John L. Reno

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.

Original language	English
Article number	191102
Journal	Applied Physics Letters
Volume	114
Issue number	19
DOIs	https://doi.org/10.1063/1.5089854
State	Published - 13 May 2019
Externally published	Yes

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title = "Split-well direct-phonon terahertz quantum cascade lasers",

abstract = "We present a so-called {"}split-well direct-phonon{"} active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.",

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AU - Flores, Yuri V.

AU - Hu, Qing

AU - Reno, John L.

PY - 2019/5/13

Y1 - 2019/5/13

N2 - We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.

AB - We present a so-called "split-well direct-phonon" active region design for terahertz quantum cascade lasers (THz-QCLs). Lasers based on this scheme profit from both elimination of high-lying parasitic bound states and resonant-depopulation of the lower laser level. Negative differential resistance is observed at room temperature, which indicates that each module behaves as a clean 3-level system. We further use this design to investigate the impact of temperature on the dephasing time of GaAs/AlGaAs THz-QCLs.

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Split-well direct-phonon terahertz quantum cascade lasers

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