Spatial distributions of trapping centers in HfO2/SiO2 gate stack

Dawei Heh; Chadwin D. Young; George A. Brown; P. Y. Hung; Alain Diebold; Eric M. Vogel; Joseph B. Bernstein; Gennadi Bersuker

doi:10.1109/TED.2007.896371

Spatial distributions of trapping centers in HfO₂/SiO₂ gate stack

Dawei Heh, Chadwin D. Young, George A. Brown, P. Y. Hung, Alain Diebold, Eric M. Vogel, Joseph B. Bernstein, Gennadi Bersuker

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO₂HfO₂ gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO₂ layer and HfO₂ SiO₂ interface region. The trap density in the SiO₂ layer increases closer to the high-κ dielectric, while the trap spatial profile as a function of the distance from the high-κ film was found to be dependent on high-κ film characteristics. These results point to interactions with the high-κ dielectric as a cause of trap generation in the interfacial SiO₂ layer.

Original language	English
Pages (from-to)	1338-1345
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	54
Issue number	6
DOIs	https://doi.org/10.1109/TED.2007.896371
State	Published - Jun 2007
Externally published	Yes

Keywords

Charge pumping
High-κ dielectrics
Interfacial layer
Maximum depth
Trap profile

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10.1109/TED.2007.896371

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title = "Spatial distributions of trapping centers in HfO2/SiO2 gate stack",

abstract = "An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO2HfO2 gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO2 layer and HfO2 SiO2 interface region. The trap density in the SiO2 layer increases closer to the high-κ dielectric, while the trap spatial profile as a function of the distance from the high-κ film was found to be dependent on high-κ film characteristics. These results point to interactions with the high-κ dielectric as a cause of trap generation in the interfacial SiO2 layer.",

keywords = "Charge pumping, High-κ dielectrics, Interfacial layer, Maximum depth, Trap profile",

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AU - Heh, Dawei

AU - Young, Chadwin D.

AU - Brown, George A.

AU - Hung, P. Y.

AU - Diebold, Alain

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

AU - Bersuker, Gennadi

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AB - An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO2HfO2 gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO2 layer and HfO2 SiO2 interface region. The trap density in the SiO2 layer increases closer to the high-κ dielectric, while the trap spatial profile as a function of the distance from the high-κ film was found to be dependent on high-κ film characteristics. These results point to interactions with the high-κ dielectric as a cause of trap generation in the interfacial SiO2 layer.

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Spatial distributions of trapping centers in HfO₂/SiO₂ gate stack

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