Spatial distributions of trapping centers in HfO 2/SiO 2 gate stacks

Dawei Heh; Chadwin D. Young; George A. Brown; P. Y. Hung; Alain Diebold; Gennadi Bersuker; Eric M. Vogel; Joseph B. Bernstein

doi:10.1063/1.2195896

Spatial distributions of trapping centers in HfO ₂/SiO ₂ gate stacks

Dawei Heh, Chadwin D. Young, George A. Brown, P. Y. Hung, Alain Diebold, Gennadi Bersuker, Eric M. Vogel, Joseph B. Bernstein

Research output: Contribution to journal › Article › peer-review

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Abstract

A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2 HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high- k film.

Original language	English
Article number	152907
Journal	Applied Physics Letters
Volume	88
Issue number	15
DOIs	https://doi.org/10.1063/1.2195896
State	Published - 10 Apr 2006
Externally published	Yes

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abstract = "A methodology to analyze charge pumping (CP) data, which allows positions of probing traps in the dielectric to be identified, was applied to extract the spatial profile of traps in SiO2 HfO2 gate stacks. The results suggest that traps accessible by CP measurements in a wide frequency range, down to few kilohertz, are located within or near the interfacial SiO2 layer rather than in the bulk of the high- k film.",

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AU - Bersuker, Gennadi

AU - Vogel, Eric M.

AU - Bernstein, Joseph B.

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Spatial distributions of trapping centers in HfO ₂/SiO ₂ gate stacks

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