Simulating and improving microelectronic device reliability by scaling voltage and temperature

Xiaojun Li; Joerg D. Walter; Joseph B. Bernstein

doi:10.1109/ISQED.2005.110

Simulating and improving microelectronic device reliability by scaling voltage and temperature

Xiaojun Li, Joerg D. Walter, Joseph B. Bernstein

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.

Original language	English
Title of host publication	Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005
Pages	496-502
Number of pages	7
DOIs	https://doi.org/10.1109/ISQED.2005.110
State	Published - 2005
Externally published	Yes
Event	6th International Symposium on Quality Electronic Design, ISQED 2005 - San Jose, CA, United States Duration: 21 Mar 2005 → 23 Mar 2005

Publication series

Name	Proceedings - International Symposium on Quality Electronic Design, ISQED
ISSN (Print)	1948-3287
ISSN (Electronic)	1948-3295

Conference

Conference	6th International Symposium on Quality Electronic Design, ISQED 2005
Country/Territory	United States
City	San Jose, CA
Period	21/03/05 → 23/03/05

Access to Document

10.1109/ISQED.2005.110

Cite this

Li, X., Walter, J. D., & Bernstein, J. B. (2005). Simulating and improving microelectronic device reliability by scaling voltage and temperature. In Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005 (pp. 496-502). Article 1410634 (Proceedings - International Symposium on Quality Electronic Design, ISQED). https://doi.org/10.1109/ISQED.2005.110

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title = "Simulating and improving microelectronic device reliability by scaling voltage and temperature",

abstract = "The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.",

author = "Xiaojun Li and Walter, {Joerg D.} and Bernstein, {Joseph B.}",

year = "2005",

doi = "10.1109/ISQED.2005.110",

language = "אנגלית",

isbn = "0769523013",

series = "Proceedings - International Symposium on Quality Electronic Design, ISQED",

pages = "496--502",

booktitle = "Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005",

note = "6th International Symposium on Quality Electronic Design, ISQED 2005 ; Conference date: 21-03-2005 Through 23-03-2005",

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Li, X, Walter, JD & Bernstein, JB 2005, Simulating and improving microelectronic device reliability by scaling voltage and temperature. in Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005., 1410634, Proceedings - International Symposium on Quality Electronic Design, ISQED, pp. 496-502, 6th International Symposium on Quality Electronic Design, ISQED 2005, San Jose, CA, United States, 21/03/05. https://doi.org/10.1109/ISQED.2005.110

Simulating and improving microelectronic device reliability by scaling voltage and temperature. / Li, Xiaojun; Walter, Joerg D.; Bernstein, Joseph B.
Proceedings - 6th International Symposium on Quality Electronic Design, ISQED 2005. 2005. p. 496-502 1410634 (Proceedings - International Symposium on Quality Electronic Design, ISQED).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The purpose of this work is to explore how device operation parameters such as switching speed and power dissipation scale with voltage and temperature. We simulated a CMOS ring oscillator under different stress conditions to determine the accurate scaling relations of these operating parameters. Reduced voltage, frequency and temperature applied to a device will reduce its internal stresses, leading to an improvement of device reliability. Since all these variations for a single device are proportional, the ratios can be applied to a full circuit and help to simplify the derating model and formulate practical design guidelines for system developers to derate devices for long life applications.

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Simulating and improving microelectronic device reliability by scaling voltage and temperature

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