Short-Time Failure of Metal Interconnect Caused by Current Pulses

Keyphrases

• Current Pulse 100%
• Metal Interconnect 100%
• Current Density 66%
• Signal Level 66%
• Thermal Equilibrium 66%
• Metallization 66%
• Temperature Rise 33%
• Reliability Study 33%
• Energy Conservation 33%
• Pulse Duration 33%
• Oxides 33%
• Al-Si 33%
• Silicon Substrate 33%
• New Criteria 33%
• Metal Line 33%
• Programming Current 33%
• Thermal Oxide 33%
• Maximum Current Density 33%
• Oxides on Silicon 33%
• Oxide Thickness 33%
• High Current Pulse 33%
• Voltage Programming 33%
• Interconnect Reliability 33%
• Current Heating 33%

Material Science

• Density 100%
• Oxide Compound 66%
• Silicon Substrate 33%
• Oxide Thickness 33%

Engineering

• Failure Time 100%