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Properties of insulator interfaces with ρ-HgCdTe
S. E. Schacham
, E. Finkman
Research output
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Contribution to journal
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Article
›
peer-review
6
Scopus citations
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Keyphrases
HgCdTe
100%
Insulator
100%
P-type
50%
Order of Magnitude
50%
Activation Energy
50%
Annealing
50%
Cm(III)
50%
Surface Layer
50%
Positive Charge
50%
Heat Treatment
50%
Complete Recovery
50%
Energy Levels
50%
Increased Temperature
50%
Sulfide
50%
Inversion Layer
50%
Surface Recombination Velocity
50%
Electron Mobility
50%
Hall Coefficient
50%
X-10
50%
Continuous Improvement
50%
Low Carrier Concentration
50%
K-surface
50%
Anneal Process
50%
Image Inversion
50%
Surface Mobility
50%
Engineering
Activation Energy
100%
Heat Treatment
100%
Surface Recombination Velocity
100%
Surface Layers
100%
Carrier Concentration
100%
Material Science
Surface (Surface Science)
100%
Activation Energy
50%
Carrier Concentration
50%
Heat Treatment
50%
Electron Mobility
50%